| PART |
Description |
Maker |
| XC3S50A-4VQ100C XC3S700A-5FG400C XC3S700A-5FT256C |
Extended Spartan-3A FPGAs, Package: 4VQ100C FPGA, PQFP100
FPGA, 1472 CLBS, 700000 GATES, 280 MHz, PBGA400
FPGA, PBGA256
Extended Spartan-3A FPGAs, Package: 4FGG484C
Extended Spartan-3A FPGAs, Package: 4FT256C
|
Xilinx, Inc.
XILINX INC
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| SAB-C504-2R24M SAB-C504-2RM SAB-C504-LM SAB-C504-L |
8-Bit Microcontrollers - 8-Bit CMOS Microcontroller with mask-programmable ROM (24MHz)
8-Bit Microcontrollers - 8-Bit CMOS Microcontroller with mask-programmable ROM (12MHz)
8-Bit Microcontrollers - 8-Bit CMOS Microcontroller for external memory (12MHz)
8-Bit Microcontrollers - 8-Bit CMOS Microcontroller for external memory (24MHz)
8-Bit Microcontrollers - 8-Bit CMOS Microcontroller for extended temperature ranges
|
Infineon
|
| Y1183150K000A0L Y1183150K000A1L Y1183150K000A9L Y1 |
Ultra High Precision Bulk Metal㈢ Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal? Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal垄莽 Z-Foil Extended Value Range Resistor
|
Vishay Siliconix
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional
1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional
/-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
/-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| 0812-1X1T-36 |
1port.Y/GO LEDs.RJ45 10/100Base-TX
INTEGRATED CONNECTOR MODULES 10/100Base-TX Extended Temp belCombo⑩ with LEDs
INTEGRATED CONNECTOR MODULES 10/100Base-TX Extended Temp belCombo with LEDs
|
Bel Fuse Inc.
|
| 0810-1XX1-27 |
1port.Y/GO LEDs.RJ45 10Base-T
INTEGRATED CONNECTOR MODULES 10Base-T Extended Temp belMag⑩ with LEDs
INTEGRATED CONNECTOR MODULES 10Base-T Extended Temp belMag with LEDs
|
Bel Fuse Inc.
|
